发明名称 PHOTOCONDUCTIVE MATERIAL
摘要 PURPOSE:To reduce drop of acceptance potential due to exposure immediately before electrostatic charging without peeling of a film by laminating a charge injection preventive layer made of an amorphous silicon carbide on a conductive substrate, and on this layer a photoconductive layer made of an amorphous silicon. CONSTITUTION:The photoconductive material 1 is composed of the conductive substrate 2, the charge injection preventive layer 3 made of an amorphous silicon carbide contg. an element of group IIIa or Va of the periodic table in an amt. of 1X10<-4>-1.0 atomic % formed on the substrate 2, the first photoconductive layer 4 made of an amorphous silicon contg. said element in an amt. of 1X10<-4> atomic % formed on the layer 3, the second photoconductive layer 5 made of amorphous silicon carbide contg. said element in an amt. of 1X10<-8> 1X10<-4> atomic % formed on the layer 4, and a surface coat layer 6 made of an amorphous silicon carbide, silicon nitride, or silicon oxide formed on the layer 5 for enhancing chemical stability.
申请公布号 JPS61126557(A) 申请公布日期 1986.06.14
申请号 JP19840248086 申请日期 1984.11.26
申请人 TOSHIBA CORP 发明人 YAMAZAKI MUTSUKI
分类号 G03G5/08;G03G5/082;G03G5/14;H01L31/0248 主分类号 G03G5/08
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