| 摘要 |
PURPOSE:To prevent residual potential and to enhance acceptance potential and photosensitivity in a wide wavelength range from UV to near IR by laminating the first photoconductive layer made of an amorphous silicon on an electrostatic charge injection preventive layer, and on this layer the second photoconductive layer made of an amorphous silicon nitride. CONSTITUTION:The photoconductive material 1 is composed of a flat plate or drum-shaped conductive substrate 2, the charge injection preventive layer 3 made of an amorphous silicon carbide formed on the substrate 2, the 0.1-5.0mum thick first photoconductive layer 4 made of an amorphous silicon formed on the layer 3, the second photoconductive layer 5 made of an amor phous silicon nitride formed on the layer 4, and, preferably a 500Angstrom -5mum thic surface coat layer 6 made of an amorphous silicon carbide, silicon nitride, or silicon oxide formed on the layer 5 for enhancing chemical stability. |
