| 摘要 |
PURPOSE:To confine current in a part which does not become the current path, to flow current in the interior only of the active layer and to obtain an MISFET having the high inverse voltage by a method wherein a high-resistance wide gap semiconductor is used for the part which does not become the current path, in the MISFET in the inversely recessed structure, wherein the gate forming part is not bored and the source and drain forming parts are dug. CONSTITUTION:This MISFET is constituted in the MIS structure, wherein a high- resistance AlxGa1-xAs (x=0.3-0.5) buffer layer 12, an N type GaAs (concentration of 10<17>/cm<2> or thereabouts) active layer 13 and a high-resistance AlxGa1-xAs layer 14 are laminatedly deposited on a GaAs substrate 11 and the gate voltage is boosted. Then, an etching is performed on the parts other than the element region to form a mesa 15, the whole surface to include the mesa 15 is covered with an SiO2 film 16 and windows 17 and 18 are opened on the source and drain forming regions. After that, an etching is performed to bore grooves 19 and 20, which intrude into the layer 12, in the windows 17 and 18, the grooves 19 and 20 are filled with GaAs layers 21 and 22, and electrodes 24 and 25 and a gate electrode 26 are respectively mounted on the GaAs layers 21 and 22 and on the layer 14 being surrounded with the GaAs layers 21 and 22. |
