| 发明名称 |
SUBSTRATE FOR AMORPHOUS SILICON |
| 摘要 |
<p>A substrate for an amorphous silicon semiconductor material characterized in that a metal or alloy film is formed on the surface of a metal substrate by means of an electroplating treatment.</p> |
| 申请公布号 |
AU552614(B2) |
申请公布日期 |
1986.06.12 |
| 申请号 |
AU19830018789 |
申请日期 |
1983.09.07 |
| 申请人 |
MITSUBISHI CHEMICAL INDUSTRIES LTD. |
发明人 |
KIYOSHI TAKASHI;MAKOTO KONAGAI;TOSHIKO YOSHITOMI;TAKESHI OMORI |
| 分类号 |
C25D7/12;C25D7/00;H01L21/205;H01L31/0392;H01L31/04;H01L31/20;(IPC1-7):H01L31/02 |
主分类号 |
C25D7/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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