| 摘要 |
PURPOSE:To obtain a hetero-junction bipolar Tr, whose manufacturing process is controlled easily and which has excellent DC characteristics and high-frequency characteristics, by forming a transition region consisting of a plurality of semiconductors, whose band gaps increase in succession by stages toward an emitter from a base, between the emitter and the base. CONSTITUTION:A GaAs collector region 3 containing an impurity (such as Si), a p type GaAs base region 4 containing an impurity (such as Be), a transition region 6 composed of a plurality of layers, which contain a metal such as Si as an impurity and a composition thereof changes in a stepped manner, and a Ga0.7Al0.3As emitter region 7 containing an impurity (such as Si) and having a wide band gap are grown on an n<+> type GaAs substrate in succession. An emitter electrode 8 and a collector electrode 1 are formed. Accordingly, a hetero-junction bipolar Tr, whose manufacturing process is controlled easily and which has excellent DC characteristics and high-frequency characteristics, is acquired.
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