An optical semiconductor device.

摘要

An optical semiconductor device comprises light emitting region of a superlatticed structure which is composed of binary compounds of GaAl and AlAs, the average AlAs mole fraction is said GaAs/AlAs superlatticed structure being 2.0 or more. Preferably the supperlatticed structure is composed of a plurality of alternate layers each consisting of two kinds of semiconductor layer units respectively, one of which kinds consists of ten or fewer AlAs atom layers and the other of which consists of forty or fewer GaAs atom layers.