发明名称 HIGH FREQUENCY ION SOURCE
摘要 PURPOSE:To obtain a high frequency ion source which can supply electron without being accompanied by a sudden rise of gas pressure by preparing a sub-discharge chamber with higher gas pressure, as well as a main-discharge chamber. CONSTITUTION:In this high frequency ion source, Xe gas is introduced into a sub-discharge chamber 10 in which pressure is higher than in a main-discharge chamber 7, from gas introducing system 5. Setting up the pressure in the sub- discharge chamber 10 to such a degree that initial ionization plasma can be generated, enables naturally ionized electrons to be accelerated in the peripheral direction by high frequency electric field induced with an induction coil 6 and to collide with Xe gas to generate the ionization plasma. The ionization plasma generated in the sub-discharge chamber 10 lows into the main-discharge chamber 7. Electrons in the ionization plasma flowing into the main-discharge chamber 7 collide with Xe gas to generate ionization plasma. Thus Xe<+> ions are induced/ accelerated out of ionization plasma by electrodes 2, 3, and 4, and then released outside from the high frequency ion source.
申请公布号 JPS61124029(A) 申请公布日期 1986.06.11
申请号 JP19840244610 申请日期 1984.11.21
申请人 TOSHIBA CORP 发明人 YOSHIDA HIDEKI;SUGAWARA TORU
分类号 H01J27/16;(IPC1-7):H01J27/16 主分类号 H01J27/16
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