发明名称 MOLECULAR BEAM EPITAXIAL CRYSTAL GROWTH DEVICE
摘要 PURPOSE:To improve an area yield of a growth film by providing a substrate support equipment with a thermal reflecting plate covering a front peripheral portion and a side portion of this substrate support plate in an outer peripheral portion of the substrate support plate. CONSTITUTION:A thermal reflecting place 11 is composed of, for instance, Ta plates of about 0.1mm in thickness, and is shaped to coat a front peripheral portion and a side portion in an outer peripheral portion of a substrate support plate 4. In a surface facing a front surface of the substrate support plate 4 and in a surface facing a side surface, plural projections 12 of about 1 mm height of cheuron-shape are provided, and the substrate support plate 4 is constructed as to be embedded from its front side keeping-a surface of a peripheral portion of the substrate support plate 4 is returned to the substrate support plate 4 by the reflection of the thermal reflecting plate 11, heat diffusion of the heat radiation is controlled and the temperature lowering of the peripheral portion is decreased.
申请公布号 JPS61121428(A) 申请公布日期 1986.06.09
申请号 JP19840243816 申请日期 1984.11.19
申请人 FUJITSU LTD 发明人 SHIBATOMI AKIHIRO
分类号 H01L21/20;H01L21/203 主分类号 H01L21/20
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