| 摘要 |
PURPOSE:To prevent wire breakdown at steps on a second layer or higher and to prevent short circuits between layers, by covering a first wiring on a semiconductor substrate by an interlayer insulating film, smoothing the difference in steps, and providing a second wiring. CONSTITUTION:A first Al wiring 12 is provided on an Si substrate 11. An interlayer insulating film 13 of polyimide, whose etching speed is the same as that of resist, and the resist 14 are overlapped. RIE is applied, and the insulating film 13 at the edge part of the wiring 12 is made smooth. A second insulating film 15 is further formed. A connecting hole 16 to the first wiring 12 is provided. A second Al wiring 17, a third insulating film 18, a connecting hole 19 and a third Al wiring 20 are sequentially formed, and multilayer wiring is performed. In this constitution, wire breakdown due to steps and short circuits between layers can be prevented, and highly reliable device can be obtained. |
