发明名称 HIGH DENSITY INTEGRATED CIRCUIT
摘要 PURPOSE:To form an integrated circuit which has no erroneous operation by cooling the integrated circuit providing a cooling element at an appropriate position of the integrated circuit using Peltier effect wherein heat is absorbed by a current at the junction of a semiconductor and a metal. CONSTITUTION:An oscillator element 1-2 is made on an n type semiconductor substrate 1-1 and a metal-n type semiconductor junction point is provided for a metal wiring 1-3 such as Al providing an aperture in an insulating material such as SiO2, etc. at the appropriate position on the n type substrate. The metal wirings from these junction points are bundled and connected to a metal-p type semiconductor junction on a p type semiconductor substrate 1-5 prepared separately from the n type substrate. On the back surfaces of both the n and p type semiconductors, metal-semiconductor junctions 1-7, 1-8 are each provided and are connected to terminals for currents. In this construction, cooling contacts 2-1, 2-2 absorb heat from a surrounding medium.
申请公布号 JPS61119067(A) 申请公布日期 1986.06.06
申请号 JP19840239474 申请日期 1984.11.15
申请人 TOSHIBA CORP 发明人 WATANABE YUKO
分类号 H01L23/38;(IPC1-7):H01L23/38 主分类号 H01L23/38
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