| 摘要 |
PURPOSE:To prevent cracks from generating in the semiconductor element by the intensive growth of voids, by a method wherein a die attacher which traps voids is interposed between a semiconductor element and a supporter. CONSTITUTION:An Au foil 7 interposed on the die attacher 6 is heated, and an Si chip 8 is bonded by press from the arrow direction, thus producing an Au-Si eutectic alloy; then, the Si chip 8 is bonded on the supporter 5. The die attacher 6 has the function of trapping voids 12 generating at the time of pellet attachment by dispersing them, and of allowing them not to move. Substance like a metallic conductor 10 with many punched holes 9 or substance like a wire sheet 11 can be used for the die attacher 6. Besides, a metallic wave plate 16 with arrayed projections 14 and recesses 15 can be used. The sizes and shapes of a mesh 13 and a hole 9 of the die attacher 6 are suitably determined by considering desired purposes. |
