| 摘要 |
PURPOSE:To unnecessitate the process of precise mask alignment, and to contrive to secure the gate-source withstand voltage and to improve the controllability and uniformity of the gate length, by a method wherein a gate electrode is formed by self-alignment with source-drain electrodes, and the source-drain electrodes are formed by self-alignment with source-drain regions. CONSTITUTION:The titled device is made of the nitride or silicide of a transition metal excellent in thermal stability. A T-type gate 301 is obtained by side- etching the first metallic layer 3. Next, high concentration ion-implanted regions 8, 9 are obtained by implanting ions 7 serving as the N type impurity with the mask of the T-type gate 301 and the second insulation film 35 on its side wall; thereafter, a source region 18 and a drain region 19 are obtained by heat treatment. Then, an ohmic metallic layer 104 is adhered, and a source electrode 38 and a drain electrode 39 are formed, thereby obtaining a FET113 having the T-type gate. |
