发明名称 MANUFACTURE OF PHOTOELECTRIC CONVERSION SEMICONDUCTOR DEVICE
摘要 PURPOSE:To increase the effective photoreceiving area by forming a nonsingle crystal semiconductor layer having a plurality of P-I-N junctions on the surface of a transparent substrate, coating with mask, opening a groove, and using a magnetic material for the mask when dividing a semiconductor layer into the semiconductor layers containing on P-I-N junction, and attracting it by a magnetic provided on the back surface of the substrate. CONSTITUTION:The first conductive film 20 such as ITO is coated on a transparent substrate 10 made of chemically strengthened glass, and a plurality of the first grooves 1 are opened thereat. Then, a nonsingle crystal semiconductor layer 30 having a plurality of P-I-N junctions is accumulated on the overall surface while burying the groove 1, a mask is coated, the second groove 2 is opened by displacing approx. 100mum from the groove 1, the layer 30 is insularly divided while containing on of P-I-N junction, and the second conductive film 40 is coated. At this time, a magnetic material is used for the mask material, attracted by a magnet provided on the back surface of the substrate, it is enabled to narrow the width of the groove 2 to 0.1-0.4mm to increase the effective photosensitive area without mask.
申请公布号 JPS61116885(A) 申请公布日期 1986.06.04
申请号 JP19840238983 申请日期 1984.11.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KOYANAGI KAORU;HAMAYA TOSHIJI;YAMAZAKI SHUNPEI
分类号 H01L31/04;H01L27/142 主分类号 H01L31/04
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