| 摘要 |
PURPOSE:To remove the narrowing in a contact hole part of the upper layer wiring by arranging a metallic layer at the bottom of the contact hole of an interlaminar insulating film and further cutting off the periphery of the upper part of the contact hole. CONSTITUTION:The lower layer wiring 2 and an interlaminar insulating film 3 are formed on a semiconductor substrate 1 and further a photoresist 4 is spread over that. The resist 4 is etched to form an opening 4a and further a contact hole 3a and then a conductive metallic film 10 is formed over the whole surface. The film 10 is so formed that the film 10 at the bottom of the hole 3a and that on the resist 4 are not connected. The periphery of upper part of the hole 3a is etched by using the film 10 as a mask to form a cut-off part 3b. When the resist 4 is removed, the film on that is also removed. When forming the upper layer wiring 11 on the film 3, the wiring 11 covers the hole 3a with an almost flat shape thereby eliminating the narrowing. |
