| 摘要 |
<p>PURPOSE:To form a small-sized available photodetector, which has simple structure and cost thereof is low, by simultaneously shaping photodiodes using a plurality of amorphous semiconductor layers onto a curved substrate. CONSTITUTION:Amorphous semiconductor layers having p-i-n structure are formed onto a flexible substrate (a stainless substrate 11), the surface thereof consists of a conductor, through a plasma method, a sputtering method, an optical CVD method or the like, and a transparent electrode film 15 is isolated and shaped onto the amorphous semiconductor layers through an evaporation method, the sputtering method or the like, thus constituting a plurality of photodiodes PD1, PD2. Terminals are extracted from each isolated shaped transparent electrode film 15 under the state in which the stainless substrate 11 is curved, and direction generated from a difference between outputs from a plurality of the photodiodes PD1, PD2 is measured,thus detecting the direction of incidence of beams.</p> |
