| 摘要 |
PURPOSE:To fine an element by eliminating the need for a contact boring process on source-drain diffusion layers. CONSTITUTION:A structure consisting of a gate oxide film 25 and a gate electrode 28 (coated with a silicon oxide film 27) is formed onto a silicon substrate 21, source-drain diffusion layers 30 are shaped to the surface section of the silicon substrate 21, tungsten layers 31 are formed only onto the source-drain diffusion layers 30, and the whole is thermally treated in an oxygen atmosphere. The silicon oxide film 27 coating the gate electrode 28 is thickened while no oxide film is shaped on the tungsten layers 31, and the tungsten layers 31 react with substrate silicon to form tungsten silicide layers 32 on the surfaces of the source-drain diffusion layers 30. Wirings can be shaped connected directly to the tungsten silicide layers 32 without forming an inter-layer insulating film and shaping a contact hole. |
