| 摘要 |
PURPOSE:To deposit a thin film and to etch the thin film or a bridge plate, by employing a rare-gas optical sensitizing method in which a rare gas of the same kind as resonance ray source atoms is used as a catalyst under a state being irradiated by the rare gas resonance rays. CONSTITUTION:Resonance rays of sealed rare gas atoms are available by an electrodeless discharge lamp 1 having a rare gas contained therein and serving as a light source. A resonance ray wavelength is 1,470Angstrom of xenon, 1,236Angstrom of krypton or 1,067Angstrom of argon. By employing a crystal plate made of magnesium fluoride for a wavelength above 1,100Angstrom or lithium fluoride for a wavelength of 1,050Angstrom is used as a transmitting window 2 which is replaceable, it is prevented that transparency may be reduced due to attachment of vapor phase reactive products. Using a rare gas optical sensitizing method, an exciting energy transferring to reacting gas molecules can be made larger than mercury, so that low temperature and high speed thin film deposition being free from mercury mixture or contamination, or etching of a thin film or a substrate, is made possible. |
