| 摘要 |
PURPOSE:To reduce astigmatism, and to form a semiconductor laser having excellent current optical output characteristics having small oscillation threshold currents and superior linearity and high output characteristics by controlling a current constriction function and an optical waveguide function independently and shaping index waveguide structure, which does not depend upon an optical absorption effect. CONSTITUTION:An n type Al0.4Ga0.6As layer with a striped groove in groove width W1 of approximately one micron, a first semiconductor layer 5, is arranged onto a p type Al0.4Ga0.6As layer 4, thus shaping a narrow current path. The forbidden band width of the n type Al0.4Ga0.6As layer 5 is made larger than that of an n type Al0.11Ga0.89As layer 3 as an active layer, thus resulting in no optical absorption effect on laser oscillation beams. On the other hand, an n type Al0.6Ga0.4As layer having forbidden band width larger the other any layers and a refractive index smaller than them, a second semiconductor layer 6, is disposed onto the n type Al0.4Ga0.6As layer 5 while shaping a striped groove in groove width W2 of approximately three micron. Accordingly, optical beams having small astigmatism can be obtained.
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