| 摘要 |
PURPOSE:To eliminate the generation of internal defect in a silicon semiconductor substrate and to lessen the generation of defect in the vicinity of the surface of the substrate, where a device is formed, by a method wherein a low-oxygen concentration substrate is used as the silicon semiconductor substrate. CONSTITUTION:The oxygen concentration of a silicon semiconductor substrate 11 is 1X10<18> atomic/cc or less and the silicon semiconductor substrate 11 has a 1.0-2.0mum thick polycrystalline silicon layer 12 on its back surface. Whereupon unnecessary impurities to intrude into the interior of the substrate from the surface in the course of process are captured by a defect layer, which is caused by the silicon layer 12. Whereby the generation of internal defect is eliminated and the generation of defect in the vicinity of the surface of the substrate 11, where a device is formed, decreases. |
