| 摘要 |
PURPOSE:To remove the step disconnection and the short-circuit of a metal wiring and to contrive the improvement of yield by forming the second wiring layer on an interlayer insulation film on a silica film liquid being spin-coated and heat-treated on the first wiring. CONSTITUTION:Silica film liquid 5 is formed by coating the silica film liquid by a spin coater and annealing on the first metal wiring 4. A phosphorous silicon glass interlayer insulation film 3 is formed. The first through hole is opened using a mask of photo resist 6 on the insulation film 3. The second metal wiring layer 7 is patterned by a photo-etching process. |
