| 摘要 |
PURPOSE:To obtain the laser array device capable of phase locked operation to high output region, by applying the structure decreasing the dependency of oscillation axis mode on the driving current to the laser arry device with several stripes. CONSTITUTION:The current-enclosing layer 2 of N-type GaAs is grown 1mum thick on the P-type GaAs substrate 1, and several V shaped grooves are formed in parallel by means of photolithography and etching. The clad layer 3 of P-type AlxGa1-xAS, photoguide layer 4 of P-type AlyGa1-yAS, active layer 5 of P-type AlzGa1-zAS and photoguide layer 6 of N-type AlyGa1-yAS are continuously grown, and the grating 30 is formed on the surface of the N type photoguide layer 6. After the resistive electrodes 9 and 10 are formed, the vertical cleavage plane 41 is completed, and the distributed feedback type laser structure with small dependency on the oscilation axis mode on the driving current is obtained.
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