发明名称 |
PURIFICATION OF SEMICONDUCTOR |
摘要 |
The removal of residual impurities from semiconductor material is accomplished by solid state electromigration of the impurities from the semiconductor slice into a surrounding conductive liquid (e.g. Hg) which is maintained at a negative potential. |
申请公布号 |
JPS61112328(A) |
申请公布日期 |
1986.05.30 |
申请号 |
JP19850168489 |
申请日期 |
1985.07.30 |
申请人 |
TEXAS INSTR INC |
发明人 |
JIYON ETSUCHI TOREGIRUGASU;BURUUSU II GUNAADE |
分类号 |
C23F1/00;C25F1/00;C30B33/00;H01L21/02;H01L21/306 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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