发明名称 MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent poor fusing of a fuse, by removing the specified fuse, which electrically isolates a defective memory cell or redundant memory cell by etching. CONSTITUTION:After the characteristic test, only a resist film 15 on a fuse 13 of a word line or a data line, which is connected to a defective memory cell, undergoes spot exposure. The resist film 16 is removed and an opening 16 is formed. Then the remaining resist film 15 is heated and hardened. A new resist film 15A, which is different from the resist film 15, is formed on the resist film 15 so as to bury the opening 16. Then, by removing the resist film 15A, an insulating film 14 on the fuse 13, which is to be etched in the opening 16, is exposed. Then, with the resist film 15 as a mask, the fuse 13 comprising aluminum, which is exposed from an opening 17, is etched and electrically cut.
申请公布号 JPS61112366(A) 申请公布日期 1986.05.30
申请号 JP19840233104 申请日期 1984.11.07
申请人 HITACHI LTD 发明人 MIYAZAWA HIROYUKI
分类号 H01L29/78;H01L21/82;H01L27/10;H01L27/118 主分类号 H01L29/78
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