| 摘要 |
PURPOSE:To increase a self-logic function in response to inputs from the outside by previously forming a plurality of gate elements in a semiconductor device and selectively shaping wirings among these gate elements in response to logical decision in another logic circuit section in the semiconductor device. CONSTITUTION:When voltage higher than normal supply voltage is applied among first and second wirings N, M passing through the intersections of connecting nodes A from the outside, bidirectional constant-voltage elements 12, 13 are each brought to ON states when the voltage is higher than the sum of the voltage of the bidirectional voltage elements 12 and 13, and a high electric field is applied between wirings P1 and P2. Consequently, an insulating film 11a consisting of a thin-film existing between both wirings P1, P2 is broken down dielectrically, and the wirings P1 and P2, are connected. A memory section 24 memorizes any connections of any intersections of the wirings N, M at that time, and transmits the memory contents over a logic section 23, thus enabling novel multiplication in a self-multiplication section 21, then allowing the fundamental constituent of artificial intelligence. |
