| 摘要 |
PURPOSE:To eliminate the dispersion of film thickness in a wafer by turning the wafer in a core tube. CONSTITUTION:A reaction gas is flowed from a gas introducing port 5 while a wafer boat 4' on which a wafer 3 is placed is rotated, thus uniformly creeping the reaction gas on the whole wafer. Accordingly, an equal film, film thickness thereof does not disperse, can be grown on the wafer 3, thus improving the yield of a semiconductor wafer. |
