| 摘要 |
PURPOSE:To obtain the title device of high density by eliminating the contact margins of wiring. CONSTITUTION:An N<+> type diffused layer 12 and a thermal oxide film 13 are formed on a P<-> type Si substrate 11. Next, after deposition of an oxide film 14, a photo resist pattern 15 is formed, and an aperture 16 with the dimension of 1mumX1mum is provided by etching the oxide films 14 and 13 using the mask of this pattern. Then, after removal of the photo resist pattern 15, the aperature 16 is filled with tungsten W 17, and its surface is made almost agreed with the4 surface of the oxide film 14. Successively, an Al-Si film is evaporated over the whole surface; thereafter, a photo resist pattern 18 is formed, and an Al-Si wiring 19 is formed by using this pattern as the mask. This semiconductor device allows no exposure of the diffused layer 12 because the aperture 16 is filled with W 17. This unnecessitates the allowance for contact margin in the width L3 of the wiring 19 and can attain the increase in density of this device. |
