发明名称 WAFER DRYING METHOD
摘要 PURPOSE:To enable the drain dry of stable wafers by preventing their levitation by a method wherein the vertical component of gas from the lower nozzle is made smaller than that of gas from the upper nozzle. CONSTITUTION:While a wafer 1 passes through the section of rollers 8, 9 in the E direction, compressed nitrogen gas is spouted out of the upper nozzle slits 10b, 11b under the inclination at 70 deg.-80 deg. to the front of the wafer 1. On the other hand, out of the lower nozzle slit 12b, compressed nitrogen gas is spouted under the inclination at 45 deg.-60 deg. to the back of the wafer 1. The vertical component of gas spouted out of the upper nozzle slit applied to the wafer 1 is set larger than that of gas spouted out of the lower nozzle slit applied to the wafer 1, and so the wafer 1 is prevented from levitation. This enables stable drain dry without oscillation due to the levitation and the like while the wafer 1 passes through the nozzle slit 12b.
申请公布号 JPS61111542(A) 申请公布日期 1986.05.29
申请号 JP19840233621 申请日期 1984.11.06
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAKI YASUO;SUZUKI TAKASHI;MAEDA YORIHISA;YAMAMOTO SHIGEYUKI
分类号 F26B15/04;F26B5/00;F26B13/28;H01L21/304 主分类号 F26B15/04
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