| 摘要 |
PURPOSE:To prevent the decomposition of tungsten hexafluoride, and to execute CVD by a normal reaction gas by providing a cooling means on a piping part of a reaction gas jet part, and inhibiting a temperature rise of a gas jet part. CONSTITUTION:In a reaction gas supply device, a monosilane inflow port 11 and a tungsten hexafluoride feed port 12 are provided coaxially, and monosilane and tungsten hexafluoride are jetted as a reaction gas from a jet port 13 and a jet port 14, respectively. A cooling water passage 15 is provided on a piping passage of the jet part of this reaction gas and cooling water is made to flow, and the temperature of the reaction gas is controlled. This cooling water is controlled to a prescribed temperature, made to flow in from a feed water hole 16 and drained from a drain hole 17. As a result, a tungsten hexafluoride gas of the jet port 14 becomes <=about 50 deg.C. Accordingly, there is no possibility that the tungsten hexafluoride gas is decomposed before it reacts with silane, and a film which is uniform and small in specific resistance can be formed. |
