发明名称 |
Improvements to semiconductor lasers. |
摘要 |
<p>These improvements to semiconductor lasers allow the fabrication of high-efficiency photoemitting devices thanks to a decrease in the threshold current necessary to optical emission stimulation. They consist in the application of a suitable magnetic field apt to confine carrier current within a limited zone of the active layer (Fig. 1).</p> |
申请公布号 |
EP0182255(A2) |
申请公布日期 |
1986.05.28 |
申请号 |
EP19850114378 |
申请日期 |
1985.11.12 |
申请人 |
CSELT CENTRO STUDI E LABORATORI TELECOMUNICAZIONIS.P.A. |
发明人 |
DI VITA, PIETRO;POTENZA, MARCELLO |
分类号 |
H01S5/06;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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