发明名称 Improvements to semiconductor lasers.
摘要 <p>These improvements to semiconductor lasers allow the fabrication of high-efficiency photoemitting devices thanks to a decrease in the threshold current necessary to optical emission stimulation. They consist in the application of a suitable magnetic field apt to confine carrier current within a limited zone of the active layer (Fig. 1).</p>
申请公布号 EP0182255(A2) 申请公布日期 1986.05.28
申请号 EP19850114378 申请日期 1985.11.12
申请人 CSELT CENTRO STUDI E LABORATORI TELECOMUNICAZIONIS.P.A. 发明人 DI VITA, PIETRO;POTENZA, MARCELLO
分类号 H01S5/06;(IPC1-7):H01S3/19 主分类号 H01S5/06
代理机构 代理人
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