| 摘要 |
An FET device comprises a substrate with source and drain regions separated by a gate structure. Between the gate and substrate is an insulator formed of a cubic fluorite structure material that is lattice matched within 1% to the substrate. The insulator may be a group II fluoride such as CayCd1-yF2 (0</=y</=1), SrzBa1-zF2 (0</=z</=1), or BaxCa1-xF2 (0</=x</=1), or an oxide such as CeO2, PbO2. The substrate may be a bulk semiconductor or an epitaxial layer such as Si, InP, GaAs, GaxAl1-xAs, GaSb, InAs, or AlAs. |
