| 摘要 |
PURPOSE:To form a device adapted for shortening a channel by forming a thin insulating film simultaneously with an insulating film on a diffused layer, thereby flattening by a method without selective oxidation. CONSTITUTION:After a gate oxide film is formed, an oxide film of part of a source/drain diffused layer is removed to form windows 4, 4' for connecting the diffused layer with a polycrystalline silicon. A polycrystalline silicon layer 5 which includes N type impurity is formed on the overall surface. A resist 6 is used as a mask to allow the polycrystalline silicon and the gate polycrystalline silicon contacted on the substrate of the source and drain region to remain. Then, the resist is removed, an N type impurity is implanted by an ion implanting method, heat treated to form source and drain diffused layers 7, 7'. Then, a thin oxide film 8 is formed by thermal oxidation on the overall surface, insulating films 9, 10 are formed thickly on the groove having no polycrystalline silicon by a growing method by sputtering applied with a bias and thinly on the polycrystalline silicon, and flattened. Then, contacts 11, 11' are selectively opened with the resist mask on the silicon 5 remaining in the previous step. |
