发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device and the method of manufacturing the same are disclosed, the semiconductor device having a plurality of elements isolated by a groove having a gentle slope at the upper side wall, and a steep slope at the lower side wall. This groove provides low steps on its mouth and occupies a small area on the substrate, thus enabling an extremely high-density integrated circuit to be formed. |
申请公布号 |
DE3174468(D1) |
申请公布日期 |
1986.05.28 |
申请号 |
DE19813174468 |
申请日期 |
1981.09.16 |
申请人 |
HITACHI, LTD. |
发明人 |
TAMAKI, YOICHI;KURE, TOKUO;SATO, AKIRA;HIGUCHI, HISAYUKI |
分类号 |
H01L21/762;(IPC1-7):H01L21/76;H01L27/04 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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