发明名称 Magnetic bubble memory
摘要 A magnetic bubble memory is formed of a series of longitudinally oriented minor registers and at least one transversely oriented major access register, all of these registers having patterns with boundaries defined by ionically implanted zones of a magnetic garnet layer. The memory is formed also with a structure for transferring bubbles from one end of the minor register to the major register, and is further configured with layered material having a predetermined format for displacing the bubbles in each minor register upon application of a rotating magnetic field. The physical structure of the memory also permits a displacement of the bubbles of the major register by the circulation of currents in two electrically conductive sheets which are superimposed on the magnetic garnet layer. The sheets have windows facing the patterns of the register, with the windows being arranged with end portions thereof in registration with the pattern boundaries to enable the bubbles to circulate while remaining in contact with the boundaries of the major register pattern in implanted zones of the garnet.
申请公布号 US4592017(A) 申请公布日期 1986.05.27
申请号 US19840622191 申请日期 1984.06.19
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 FEDELI, JEAN M.;JOUVE, HUBERT;MAGNIN, JOEL;PISELLA, CHRISTIAN
分类号 G11C11/14;G11C19/08;(IPC1-7):G11C19/08 主分类号 G11C11/14
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