(VSIS) semiconductor laser with reduced compressive stress

摘要

A V-channeled substrate inner stripe (VSIS) laser is manufactured on a GaAs substrate. The VSIS laser includes p-Ga0.7Al0.3As active layer, and an n-Ga0.85Al0.15As cap layer. The GaAs substrate is removed from the final device. The n-Ga0.85Al0.15As cap layer functions to support the final device, and to minimize a stress applied to the p-Ga0.7Al0.3As active layer.