摘要 |
PURPOSE:To protect a semiconductor laser element from surge voltage by connecting a device, in which a plurality of diodes are connected in series with the laser element, in parallel in the same polarity as the laser element. CONSTITUTION:A plurality of silicon diodes 8 connected in series so that the directions of the flow of currents are directed in the same direction are connected in the same polarity as a semiconductor laser element 1. The diodes 8 and the element 1 are housed in the same package. The forward voltage of the diode 8 extends over approximately 0.6V. Consequently, the diode 8 is conducted when not less than 2.4V is applied in the forward direction of the element 1. Accordingly, the flow of overcurrents through the element 1 is prevented, thus obviating the deterioration of the element 1.
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