| 摘要 |
<p>PURPOSE:To increase the capacity of a liquid-crystal display device to a large scale, by selectively performing Ni-plating to data lines formed of a transparent conductive film of an active matrix substrate. CONSTITUTION:A silicon oxide film 13 is formed by forming a polycrystalline silicon film 12 to a prescribed shape on a transparent substrate 11 and a diffusion layer is formed by forming a gate electrode and gate wiring 14 on the film 13. Then a transparent electrode 17 and data line 18 are provided after an inter-layer insulating film 15 is put on the diffusion layer and contact holes are opened. Thereafter, nonelectrolytic Ni-plating is selectively performed to the transparent conductive film pattern. After the Ni-plating, the Ni 19 adhering to the data line 18 and transparent electrode 17 for driving crystals is removed by photo etching method. The Ni-plating is performed to form a Ni film of a thickness of about 4,000Angstrom by dipping the glass substrate 11 in an ordinary Ni-plating liquid after the substrate is pre-treated with a liquid containing Pa and Sn.</p> |
