发明名称 SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PURPOSE:To make it feasible to form thin films very rapidly by a method wherein a light source of ultraviolet rays to activate the surface of substrate and an oscillator of laser beams to excite reaction gas are provided. CONSTITUTION:The surface of substrate 5 heated by a heater 3 at low temperature is irradiated with ultraviolet rays from a light source 22 to activate the substrate 5. Besides, reaction gas 4 is flowed from an inlet 7 to a substrate 5 to be irradiated with laser beams 12 for photochemical reaction. Resultantly, thin films with even thickness may be formed very rapidly on the substrate 5.
申请公布号 JPS61108130(A) 申请公布日期 1986.05.26
申请号 JP19840230751 申请日期 1984.11.01
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBAYASHI TOSHIYUKI;OTOMO YOSHIMI;KINOSHITA YOSHIMI;ODA MASAO
分类号 H01L21/205;H01L21/263 主分类号 H01L21/205
代理机构 代理人
主权项
地址