发明名称 SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PURPOSE:To augment and equalize the intensity of illumination by a method wherein, when reaction gas contained in a reaction chamber is irradiated with light making photochemical initiation to deposit thin films on a substrate arranged in the reaction gas, linear lamp groups are respectively arranged outside the slopes of almost isoceles triangular section of the reaction chamber while the reaction gas is supplied from the top of the chamber. CONSTITUTION:A reaction chamber 11 containing a substrate 5 to deposit thin films is composed of almost isoceles triangular while light entrance windows 6 made of light transmitting material are provided on the two slopes to arrange respective linear lamp groups 12 outside the slopes. Besides, an inlet 7 with a nozzle 17 for supplying reaction gas 4 is provided on the top of reaction chamber 11 while an opposing outlet 8 is formed on the bottom surface. On the other hand, a movable table 19 with a heater 3 built-in is provided on the bottom surface to mount a substrate 5 on the table 19 to be slided by means of a connector 19a and a ball screw 23 etc. In such a constitution, the distances between the peripheral parts and central part of substrate 5 and the lamp groups may be differentiated from one another to form thin films with even film thickness.
申请公布号 JPS61108124(A) 申请公布日期 1986.05.26
申请号 JP19840230745 申请日期 1984.11.01
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBAYASHI TOSHIYUKI;OTOMO YOSHIMI;KINOSHITA YOSHIMI;ODA MASAO
分类号 H01L21/205;H01L21/263 主分类号 H01L21/205
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