| 摘要 |
PURPOSE:To prevent the deterioration of the withstanding voltage at a fuse fusion-cutting section and the leakage of currents by disposing a first insulating film on a semiconductor substrate, a third insulating film arranged to the upper section of a fuse pattern and a second insulating film having selectivity for etching to a section just under the fuse pattern. CONSTITUTION:A thin oxide film 15 for blocking an impurity is formed to an silicon surface, and a phospho-silicate glass inter-layer insulating film 17 is shaped onto a substrate. Wiring contact windows 18 to source-drain regions and a wiring contact window to a gate and a fuse-pattern are formed, wirings 19a, 19b, 19c, 19d to sources and drains and a wiring to a gate electrode and the fuse-pattern are shaped, and a phospho-silicate glass film 20 is formed onto the substrate. An opening 22 for fusion-cutting a fuse exposing a fusion cutting section for a polycrystalline silicon-fuse pattern 8c and the surface of an silicon nitride film pattern 116 in the periphery of the fuse pattern 8c is shaped to the phospho-silicate glass film 20 and the phospho-silicate glass inter-layer film 17. |
