| 摘要 |
PURPOSE:To heighten yield and reduce manufacturing processes by forming a light sensor transparent electrode after forming a thin film transistor on a transparent substrate, and forming internal wiring simultaneously between opposed electrodes and the thin film transistor on a light sensor layer provided on the transparent electrode and integrating them. CONSTITUTION:The light sensor is made up of an n type or non-dope amorphous silicon carbide layer 17, an amorphous silicon layer 18 and a p type amorphous cylinder layer 19. As incidence of light is made through the transparent substrate, patterning process of the transparent electrode 110 can be made earlier than patterning process of an upper electrode and internal wiring 16. Further, the light sensor is formed 3d off from the end of the transparent substrate to remove noise light. Thus, lowering of yield can be minimized by optimum distance (d-10d) of the position of the light sensor.
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