SI SUBSTRATE GROVIDED WITH SINGLE CRYSTALLINE THIN FILM OF GROUP III-V COMPOUND AND PRODUCTION THEREOF

摘要

PURPOSE:To form the high-quality GaAs on an Si substrate by forming a thin film layer of ultralattice structure of group III-V compd. before forming GaAs or the group III-V compd. which is lattice-matched therewith on the Si substrate. CONSTITUTION:The following single crystalline Si substrate is produced wherein one piece of coupling hands forming a bond site of Si has the crystal orientation existing parallel to the substrate. A multilayered structure of thin film layer of ultralattice structure which consists of a single crystalline thin film of solid solution having two compositions of Ge and Si series is formed on the substrate. The average value of lattice number of two solid solutions forming the ultralattice structure is made close to the lattice constant of the small hand between two solid solutions by which the ultralattice structure positioned in the upper side is formed. Furthermore the thin film layer of ultralattice structure of group III-V compd. is formed thereon and the single crystalline thin film layer of group III-V compd. is formed thereon.