| 摘要 |
Light is amplified in a semiconductor laser structure through which a current is passed and (a) the wavelength of the light is greater than the wavelength of maximum gain of the laser structure, or (b) injection locking is avoided, or (c) the current is controlled so as at least partly to compensate for the decrease in the monitored light output at a wavelength or over a wavelength range distinct from that of the emitted amplified signal. In this way relatively high input powers can be amplified. |
