发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make suitable for micro fabrication by a method wherein a recess is made easy to be filled with a deposited film by leaving a thin film in a recess region of the substrate surface by utilizing a fragile film deposited on the step side wall of a deposited thin film by directive deposition and the resist processing. CONSTITUTION:A thin film is deposited on a substrate 20 by directive deposition. When the fragile film 23 is removed by slight etching, deposited films 21 and 22 are severed by a gap 24, and the step side wall is exposed. The gap 24 is filled up as shown by a numeral 25 by coating the side wall with a resist 26, thus severing 21 and 22. Using an exposure mask, the resist in a projection region is exposed to exposure beams 27 in such a manner that the region width 28 comes in the projection width 29. Therefore, the width 28 is made smaller than the width 29 by the alignment accuracy. After exposure and development, a minute film 22 is removed by etching with the mask of a resist 30, and the resist 30 is removed.
申请公布号 JPS61104626(A) 申请公布日期 1986.05.22
申请号 JP19840225935 申请日期 1984.10.29
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 EBARA KOHEI;UNNO HIDEYUKI;MURAMOTO SUSUMU
分类号 H01L21/3213;H01L21/302;H01L21/3065;H01L21/3205 主分类号 H01L21/3213
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