| 摘要 |
PURPOSE:To contrive the increase in withstand voltage and the improvement in response to light by a method wherein the Si2N4 layer side interface of the first a-Si:H layer is provided with the third a-Si:H layer by doping a receptor impurity in a larger amount than to that layer, and the opposite interface is provided with the second a-Si:H layer with a larger amount of hydrogen content. CONSTITUTION:The title element is constructed by forming a layer 22 made mainly of amorphous hydrogenated Si and an Si nitride layer or Si oxide layer 23 on a conductive substrate 21. The above-mentioned layer 22 is constructed by including the first amorphous hydrogenated Si layer 24 as the center layer, by forming the third amorphous hydrogenated Si layer 26 of larger acceptor impurity concentration than that of the center layer 24 at the interface of this layer 24 on the Si nitride or Si oxide layer 23 side, and by forming the second amorphous hydrogenated Si layer 25 of larger hydrogen content than that of said layer 24. This manner inhibits electron injection and improves the withstand voltage. Besides, the operating voltage decreases, and the sensitivity to long wavelength increases. |
