| 摘要 |
In the course of this process for producing thin-film semiconductor components, in particular solar cells, a doped layer and an essentially intrinsic layer, in both cases containing silicon and/or germanium or silicon and/or germanium and carbon, are deposited in succession on a metal or metal oxide layer 2. The intrinsic layer 4 is deposited by plasma-induced decomposition of a silicon- and/or germanium-containing gas. To prevent the incorpation of metallic impurities as far as possible, the doped layer 3 is deposited on the metal or metal oxide layer 2 by thermally induced decomposition of a silicon- and/or germanium-containing gas. The thermal decomposition takes place in a gas phase containing alkylsilanes, alkylenedisilanes, vinylsilanes, alkylvinylsilanes or allylsilanes. …<IMAGE>… |
