| 摘要 |
PURPOSE:To form a uniform film having a desired component onto a wafer by a method wherein a reaction chamber is divided into three spaces continuously connected by partition walls, a film forming material is disposed in the central space, a reaction gas is fed from one of residual two spaces and the reaction gas is discharged from the other. CONSTITUTION:The inside of a reaction chamber 1 is decompressed, a first throttle valve 2 is opened, a reaction gas is fed into the reaction chamber 1 through an introducing pipe 3 from a gas feeder 4, and wafers 12... housed in a reaction space 18 are heated by resistance heaters 17.... The reaction gas is introduced into the reaction space 18 through through-holes 8... from a reaction-gas supply space 19, and reaches the surfaces of the wafers 12..., and desired molecules deposit by a chemical reaction. Derivatives generated by the chemical reaction and an excess reaction gas are discharged quickly into a reaction-gas discharge space 20 from the reaction space 18 through through- holes 10..., and absorbed to an exhaust system 7 through an exhaust pipe 6. Accordingly, the uniformity of film thickness can be improved without sacrificing mass productivity, and, particularly, a special effect is displayed in the formation of a film containing impurities. |
