Ohmic contacts for hydrogenated amorphous silicon.

摘要

A method of forming an ohmic contact between a semiconductor (a), for example an amorphous silicon hydride semiconductor, and a substrate (3), which includes coating a film (1) of palladium on the substrate and overcoating the palladium with a thin film (5) of amorphous silicon hydride causing a thin palladium silicide layer (7) to be formed therebetween. The amorphous silicon hydride is dehydrogenated by annealing forming a highly defective amorphous silicon layer and a thicker palladium silicide layer through which carriers can readily tunnel. The amorphous silicon hydride (or other) semiconductor (9) is then coated over the amorphous silicon layer to the desired thickness.