| 摘要 |
PURPOSE:To obtain a V-groove type MOSFET, in which a small number of carriers are not stored and a switching time thereof is shortened even on inductive load driving, by forming a source electrode in a groove reaching to a drain region and shaping a Schottky junction between the drain region and the source electrode. CONSTITUTION:A p type silicon diffusion layer 2 and an n type silicon diffusion layer 3 are formed onto an epitaxial layer 11 on an n type silicon substrate 1, and a large number of V-shaped grooves are shaped through etching. The silicon substrate is thermally oxidized to form a gate oxide film 5, and the oxide films on the V-shaped groove sections are removed at every other groove. Platinum is evaporated onto the whole surface of the silicon substrate, and the substrate is thermally treated and treated in compressed water, thus selectively shaping a platinum silicide layer 10. The platinum silicide layer 10 is in ohmic-contact with the n type silicon diffusion layer 3 in impurity concentration of approximately 10<19>cm<-3>, but it shapes an excellent Schottky-contact with the n type epitaxial layer 11 in impurity concentration of approximately 10<14>cm<-3>. Lastly, a gate electrode 4, source electrodes 6 and a drain electrode 7 are formed. |
