| 摘要 |
PURPOSE:To provide the titled furnace capable of keeping temperature in the heat-insulating space to a constant level, and enabling the production of single crystal having high quality, by encircling the furnace body with a casing having heat-insulating structure forming a heat-insulating space between the furnace and the casing, and placing a device for controlling the temperature in the casing. CONSTITUTION:The furnace bodies 2, 3 containing the reaction tube 1 for the growth of compound semiconductor crystal, the heating element, etc. are encircled with the casing 4 having heat-insulating structure forming a heat-insulating space 5 having a relatively small volume between the furnace and the casing. The external thermal disturbance is shielded with the casing 4. The air in the casing 4 heated by the heat of the furnace bodies 2, 3 is cooled to a specific temperature by the air conditioner 8, and recycled to the heat-insulating space 5 of the side of the furnace body 3 to keep the temperature in the heat- insulating space 5 to a constant level. Accordingly, a single crystal of a compound semiconductor having high quality can be produced.
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