发明名称 MARKING-SCRATCH FORMING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To form marking scratches accurately and to prevent the breakdown of the edge corner part of a wafer, by arranging a stopper at the side of the edge part of the wafer, sweeping and moving a scriber to the stopper side from a specified position, contacting the scriber with the stopper before the scriber reaches the end, and moving the scriber on the stopper. CONSTITUTION:A wafer 10 is sucked and fixed on a movable table 20 by a vacuum chuck 21. An aluminum foil 40 is attached thereon with an edge part 11 made to remain. A scriber 30 is slowly lowered on the aluminum foil 40 and made to sweep and more to the side of the edge part 11. Before the scriber 30 reaches the end of the edge part 11, the scriber 30 is contacted with the edge of a stopper 50 and moved on the stopper 50. Then the scriber 30 is lifted. The movable table 20 is moved in the direction of an arrow (a) along rails 23 at every specified pitch, and the marking is repeated. Since the marking scratches are not formed to the end of the wafer 10, the breakdown of the edge corner part of the wafer 10 is prevented and accurate cleaving can be achieved.</p>
申请公布号 JPS6194340(A) 申请公布日期 1986.05.13
申请号 JP19840217137 申请日期 1984.10.15
申请人 ROHM CO LTD 发明人 FUKADA HAYAMIZU;TANAKA HARUO;MUSHIGAMI MASAHITO
分类号 H01L21/301;H01L21/78;(IPC1-7):H01L21/78 主分类号 H01L21/301
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